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• 31. [Article] Effective force constant ratios : iron in iridium and rhodium

  Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature ...

  Citation × Citation Citation Abstract Copy Title: Effective force constant ratios : iron in iridium and rhodium Author: Munsterman, Dennis Year: 1980 Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature f values. These moments are combined by modern theory to estimate the magnitude of the host-host to host-impurity force constant ratio. Ratios of the various host moments are also examined. Title: Effective force constant ratios : iron in iridium and rhodium Author: Munsterman, Dennis Year: 1980 Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature f values. These moments are combined by modern theory to estimate the magnitude of the host-host to host-impurity force constant ratio. Ratios of the various host moments are also examined. Close

• 32. [Article] Controlled Fabrication of High-Yield CdS Nanostructures by Compartment Arrangement

  High-yield, high-purity CdS nanostructures were synthesized in a turf-like configuration using an improved vapor-liquid-solid method. To increase the yield, a compartment arrangement was employed. The ...

  Citation × Citation Citation Abstract Copy Title: Controlled Fabrication of High-Yield CdS Nanostructures by Compartment Arrangement Author: Green, Joshua M., Lawrance, Juno, Jiao, Jun Year: 2008 High-yield, high-purity CdS nanostructures were synthesized in a turf-like configuration using an improved vapor-liquid-solid method. To increase the yield, a compartment arrangement was employed. The specific kind of nanostructure fabricated was found to be directly dependent on the temperature in the compartment. Along with the high-yield growth of CdS nanorods, nanowires, and nanobelts, intertwined structures were also observed, and the electron field emission property of the intertwined structures was investigated and compared with that of other type of nanostructures. Photoluminescence measurements at 10 K showed a peak emission from the CdS nanostructures at 485 nm. Title: Controlled Fabrication of High-Yield CdS Nanostructures by Compartment Arrangement Author: Green, Joshua M., Lawrance, Juno, Jiao, Jun Year: 2008 High-yield, high-purity CdS nanostructures were synthesized in a turf-like configuration using an improved vapor-liquid-solid method. To increase the yield, a compartment arrangement was employed. The specific kind of nanostructure fabricated was found to be directly dependent on the temperature in the compartment. Along with the high-yield growth of CdS nanorods, nanowires, and nanobelts, intertwined structures were also observed, and the electron field emission property of the intertwined structures was investigated and compared with that of other type of nanostructures. Photoluminescence measurements at 10 K showed a peak emission from the CdS nanostructures at 485 nm. Close

• 33. [Article] Remote Plasma Assisted Growth of Graphene Films

  Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma ...

  Citation × Citation Citation Abstract Copy Title: Remote Plasma Assisted Growth of Graphene Films Author: Nandamuri, Gopichand, Roumimov, Sergei, Solanki, Raj Year: 2010 Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications. Title: Remote Plasma Assisted Growth of Graphene Films Author: Nandamuri, Gopichand, Roumimov, Sergei, Solanki, Raj Year: 2010 Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications. Close

• 34. [Article] Anisotropic magnetoresistance in the organic superconductor β″–(BEDT-TTF)2SF5CH2CF2SO3

  In this paper, we report transport measurements of interlayer magnetoresistance with field parallel and perpendicular to the current direction in an all organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃. ...

  Citation × Citation Citation Abstract Copy Title: Anisotropic magnetoresistance in the organic superconductor β″–(BEDT-TTF)2SF5CH2CF2SO3 Author: Su, X., Zuo, F., Schlueter, J. A., Williams, Jack M., Nixon, P. G., Winter, Rolf Walter, Gard, Gary L. Year: 1999 In this paper, we report transport measurements of interlayer magnetoresistance with field parallel and perpendicular to the current direction in an all organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃. For H∥I, the isothermal magnetoresistance R(H) at low temperatures (T Title: Anisotropic magnetoresistance in the organic superconductor β″–(BEDT-TTF)2SF5CH2CF2SO3 Author: Su, X., Zuo, F., Schlueter, J. A., Williams, Jack M., Nixon, P. G., Winter, Rolf Walter, Gard, Gary L. Year: 1999 In this paper, we report transport measurements of interlayer magnetoresistance with field parallel and perpendicular to the current direction in an all organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃. For H∥I, the isothermal magnetoresistance R(H) at low temperatures (T Close

• 35. [Article] Transmission studies of explosive vaporization of a transparent liquid film on an opaque solid surface induced by excimer-laser-pulsed irradiation

  Examines the dynamics of the explosion of a liquid film by an ultraviolet excimer pulsed laser studied experimentally on top of an amorphous silicon film deposited on fused quartz. Background on thermal ...

  Citation × Citation Citation Abstract Copy Title: Transmission studies of explosive vaporization of a transparent liquid film on an opaque solid surface induced by excimer-laser-pulsed irradiation Author: Leung, P.T., Do, Nhan, Klees, Leander, Leung, Wing P., Tong, Frank Year: 1992 Examines the dynamics of the explosion of a liquid film by an ultraviolet excimer pulsed laser studied experimentally on top of an amorphous silicon film deposited on fused quartz. Background on thermal physics of superheated pure or mixed liquids; Techniques for surface temperature measurement; Experimental of probe laser and pulsed excimer laser. Title: Transmission studies of explosive vaporization of a transparent liquid film on an opaque solid surface induced by excimer-laser-pulsed irradiation Author: Leung, P.T., Do, Nhan, Klees, Leander, Leung, Wing P., Tong, Frank Year: 1992 Examines the dynamics of the explosion of a liquid film by an ultraviolet excimer pulsed laser studied experimentally on top of an amorphous silicon film deposited on fused quartz. Background on thermal physics of superheated pure or mixed liquids; Techniques for surface temperature measurement; Experimental of probe laser and pulsed excimer laser. Close

• 36. [Article] Residual images in charged-coupled device detectors

  We present results of a systematic study of persistent, or residual, images that occur in charged-coupled device (CCD) detectors. A phenomenological model for these residual images, also known as "ghosting," ...

  Citation × Citation Citation Abstract Copy Title: Residual images in charged-coupled device detectors Author: Rest, Armin, Mündermann, Lars, Widenhorn, Ralf, Bodegom, Erik, McGlinn, T. C. Year: 2002 We present results of a systematic study of persistent, or residual, images that occur in charged-coupled device (CCD) detectors. A phenomenological model for these residual images, also known as "ghosting," is introduced. This model relates the excess dark current in a CCD after exposure to the number of filled impurity sites which is tested for various temperatures and exposure times. We experimentally derive values for the cross section, density, and characteristic energy of the impurity sites responsible for the residual images. Title: Residual images in charged-coupled device detectors Author: Rest, Armin, Mündermann, Lars, Widenhorn, Ralf, Bodegom, Erik, McGlinn, T. C. Year: 2002 We present results of a systematic study of persistent, or residual, images that occur in charged-coupled device (CCD) detectors. A phenomenological model for these residual images, also known as "ghosting," is introduced. This model relates the excess dark current in a CCD after exposure to the number of filled impurity sites which is tested for various temperatures and exposure times. We experimentally derive values for the cross section, density, and characteristic energy of the impurity sites responsible for the residual images. Close

• 37. [Article] On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment

  We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the ...

  Citation × Citation Citation Abstract Copy Title: On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment Author: Keating, Chris M., Charlton, M., Straton, Jack C. Year: 2014 We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the principle of detailed balance. The ion can potentially be created using interactions of positrons with trapped antihydrogen, and our analysis includes a discussion in which estimates of production rates are given. Motivations to produce include its potential use as an intermediary to cool antihydrogen to ultra-cold (sub-mK) temperatures for a variety of studies, including spectroscopy and probing the gravitational interaction of the anti-atom. Title: On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment Author: Keating, Chris M., Charlton, M., Straton, Jack C. Year: 2014 We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the principle of detailed balance. The ion can potentially be created using interactions of positrons with trapped antihydrogen, and our analysis includes a discussion in which estimates of production rates are given. Motivations to produce include its potential use as an intermediary to cool antihydrogen to ultra-cold (sub-mK) temperatures for a variety of studies, including spectroscopy and probing the gravitational interaction of the anti-atom. Close

• 38. [Article] Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices

  As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels ...

  Citation × Citation Citation Abstract Copy Title: Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices Author: Widenhorn, Ralf, Tunaru, Ionel, Bodegom, Erik, Iordache, Dan A. Year: 2010 As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels - the evaluation of a reduced number of basic impurities parameters. Unlike these works, this paper tries to obtain--by means of some better approximations of the Shockley-Read-Hall (SRH) model--more information about the studied impurities, as well as the study of the compatibility of the used theoretical model SRH relative to the experimental data. In this manner, both the compatibility SRH model with the studied experimental data was checked up, as well as the values of some additional physical parameters of the impurified semiconductor (the logarithms of the pre-exponential factors lnDiff, lnDep, the effective value of the energy gap Eg) and of the separate capture cross-sections of the free electrons, and holes, respectively, by the studied deep-level contaminants, were evaluated. Title: Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices Author: Widenhorn, Ralf, Tunaru, Ionel, Bodegom, Erik, Iordache, Dan A. Year: 2010 As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels - the evaluation of a reduced number of basic impurities parameters. Unlike these works, this paper tries to obtain--by means of some better approximations of the Shockley-Read-Hall (SRH) model--more information about the studied impurities, as well as the study of the compatibility of the used theoretical model SRH relative to the experimental data. In this manner, both the compatibility SRH model with the studied experimental data was checked up, as well as the values of some additional physical parameters of the impurified semiconductor (the logarithms of the pre-exponential factors lnDiff, lnDep, the effective value of the energy gap Eg) and of the separate capture cross-sections of the free electrons, and holes, respectively, by the studied deep-level contaminants, were evaluated. Close

• 39. [Article] Interpreting Activation Energies in Digital Image Sensors

  We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the ...

  Citation × Citation Citation Abstract Copy Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Close

• 40. [Article] Laser as a Tool to Study Radiation Effects in CMOS

  Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology ...

  Citation × Citation Citation Abstract Copy Title: Laser as a Tool to Study Radiation Effects in CMOS Author: Ajdari, Bahar Year: 2017 Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology advances, and chip reliability has become more important than ever. Particle accelerator testing has been the standard method to characterize the sensitivity of chips to single event upsets (SEUs). However, because of their costs and availability limitations, other techniques have been explored. Pulsed laser has been a successful tool for characterization of SEU behavior, but to this day, laser has not been recognized as a comparable method to beam testing. In this thesis, I propose a methodology of correlating laser soft error rate (SER) to particle beam gathered data. Additionally, results are presented showing a temperature dependence of SER and the "neighbor effect" phenomenon where due to the close proximity of devices a "weakening effect" in the ON state can be observed. Title: Laser as a Tool to Study Radiation Effects in CMOS Author: Ajdari, Bahar Year: 2017 Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology advances, and chip reliability has become more important than ever. Particle accelerator testing has been the standard method to characterize the sensitivity of chips to single event upsets (SEUs). However, because of their costs and availability limitations, other techniques have been explored. Pulsed laser has been a successful tool for characterization of SEU behavior, but to this day, laser has not been recognized as a comparable method to beam testing. In this thesis, I propose a methodology of correlating laser soft error rate (SER) to particle beam gathered data. Additionally, results are presented showing a temperature dependence of SER and the "neighbor effect" phenomenon where due to the close proximity of devices a "weakening effect" in the ON state can be observed. Close