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• 1. [Article] Isotopic Signatures and Concentration Profiles of Nitrous Oxide in a Rice-Based Ecosystem During the Drained Crop-Growing Season

  The stable isotopic composition of nitrous oxide (N₂O) in agricultural soils can improve our understanding of the relative contributions of the main microbial processes (nitrification and denitrification) ...

  Citation × Citation Citation Abstract Copy Title: Isotopic Signatures and Concentration Profiles of Nitrous Oxide in a Rice-Based Ecosystem During the Drained Crop-Growing Season Author: Xiong, Z. Q., Khalil, M. A. K., Xing, G., Shearer, Martha J., Butenhoff, Christopher Lee Year: 2009 The stable isotopic composition of nitrous oxide (N₂O) in agricultural soils can improve our understanding of the relative contributions of the main microbial processes (nitrification and denitrification) responsible for N₂O formation in soils, and can provide constraints for the atmospheric N2O budget. Here, we present soil profiles featuring N₂O concentrations and δ¹⁵N and δ¹⁸O values in N₂O over time, which permit the in situ identification of processes and sites of N₂O production in a rice-based ecosystem seeded with winter wheat. Our δ¹⁵N and δ¹⁸O soil profile values support the conclusion that denitrification is the dominant process behind N₂O production during the winter wheat season. The soil N₂O gas concentrations are higher below 10 cm than above 10 cm, and more depleted in ¹⁵N - N₂O at 10–15 cm depth compared to other soil depths, which indicates that the N₂O production zone is located at a depth of 10–15 cm within 0–20 cm. The δ¹⁵Nair and δ¹⁸OSMOW (δ¹⁸O of standard mean ocean water) values for soil gas N₂O averaged over the entire wheat growing season are +0.90 ± 2.9 (n = 64) and +39.3 ± 3.1 (n = 64), respectively. Given that paddy source N₂O is much heavier in both measured ¹⁵N and ¹⁸O compared to other fertilized soils, agricultural soils have been underestimated as a source of N₂O since isotopic constraints from rice agriculture have not been taken into account. Title: Isotopic Signatures and Concentration Profiles of Nitrous Oxide in a Rice-Based Ecosystem During the Drained Crop-Growing Season Author: Xiong, Z. Q., Khalil, M. A. K., Xing, G., Shearer, Martha J., Butenhoff, Christopher Lee Year: 2009 The stable isotopic composition of nitrous oxide (N₂O) in agricultural soils can improve our understanding of the relative contributions of the main microbial processes (nitrification and denitrification) responsible for N₂O formation in soils, and can provide constraints for the atmospheric N2O budget. Here, we present soil profiles featuring N₂O concentrations and δ¹⁵N and δ¹⁸O values in N₂O over time, which permit the in situ identification of processes and sites of N₂O production in a rice-based ecosystem seeded with winter wheat. Our δ¹⁵N and δ¹⁸O soil profile values support the conclusion that denitrification is the dominant process behind N₂O production during the winter wheat season. The soil N₂O gas concentrations are higher below 10 cm than above 10 cm, and more depleted in ¹⁵N - N₂O at 10–15 cm depth compared to other soil depths, which indicates that the N₂O production zone is located at a depth of 10–15 cm within 0–20 cm. The δ¹⁵Nair and δ¹⁸OSMOW (δ¹⁸O of standard mean ocean water) values for soil gas N₂O averaged over the entire wheat growing season are +0.90 ± 2.9 (n = 64) and +39.3 ± 3.1 (n = 64), respectively. Given that paddy source N₂O is much heavier in both measured ¹⁵N and ¹⁸O compared to other fertilized soils, agricultural soils have been underestimated as a source of N₂O since isotopic constraints from rice agriculture have not been taken into account. Close

• 2. [Article] Interpreting Activation Energies in Digital Image Sensors

  We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the ...

  Citation × Citation Citation Abstract Copy Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Close

• 3. [Article] Measurements of the Mössbauer Fraction in Chromium

  Precision measurements of the Mossbauer fraction of Fe57 in chromium were made using the black absorber technique over a range of temperatures from 78K to 792K. Because of uncertainty in corrections at ...

  Citation × Citation Citation Abstract Copy Title: Measurements of the Mössbauer Fraction in Chromium Author: Brace, B. Frederick, Jr. Year: 1972 Precision measurements of the Mossbauer fraction of Fe57 in chromium were made using the black absorber technique over a range of temperatures from 78K to 792K. Because of uncertainty in corrections at high temperatures, only the data collected from 78K to 600K was used in analyzing the results. The f values were analyzed in terms of a Debye approximmation. This analysis of the data yielded a theoretical fit which was based on two adjustable parameters (a Debye temperature of 438K and an anharmonicity parameter of 2 x 10-4K-1). The f measurements were also analyzed using a theory proposed by Mannheim in 1968. Two different phonon density of states functions (Feldman, Muhlestein) were applied to Mannheim’s theory, and the resulting theoretical fits to experimental values showed a decrease in the force constant as a result of introducing an impurity into the chromium. Feldman’s phonon spectrum yielded a force constant ratio of 1.30±.07 and an anharmoncity parameter of ℇ=2.5(±.5) x 10-4K-1. Title: Measurements of the Mössbauer Fraction in Chromium Author: Brace, B. Frederick, Jr. Year: 1972 Precision measurements of the Mossbauer fraction of Fe57 in chromium were made using the black absorber technique over a range of temperatures from 78K to 792K. Because of uncertainty in corrections at high temperatures, only the data collected from 78K to 600K was used in analyzing the results. The f values were analyzed in terms of a Debye approximmation. This analysis of the data yielded a theoretical fit which was based on two adjustable parameters (a Debye temperature of 438K and an anharmonicity parameter of 2 x 10-4K-1). The f measurements were also analyzed using a theory proposed by Mannheim in 1968. Two different phonon density of states functions (Feldman, Muhlestein) were applied to Mannheim’s theory, and the resulting theoretical fits to experimental values showed a decrease in the force constant as a result of introducing an impurity into the chromium. Feldman’s phonon spectrum yielded a force constant ratio of 1.30±.07 and an anharmoncity parameter of ℇ=2.5(±.5) x 10-4K-1. Close

• 4. [Article] Effective force constant ratios : iron in iridium and rhodium

  Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature ...

  Citation × Citation Citation Abstract Copy Title: Effective force constant ratios : iron in iridium and rhodium Author: Munsterman, Dennis Year: 1980 Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature f values. These moments are combined by modern theory to estimate the magnitude of the host-host to host-impurity force constant ratio. Ratios of the various host moments are also examined. Title: Effective force constant ratios : iron in iridium and rhodium Author: Munsterman, Dennis Year: 1980 Classical methods of analyzing heat capacity data for the characteristic moments of the frequency distribution are applied to iridium and rhodium. Impurity moments are determined from high and low temperature f values. These moments are combined by modern theory to estimate the magnitude of the host-host to host-impurity force constant ratio. Ratios of the various host moments are also examined. Close

• 5. [Article] High-resolution angular measurement using surface-plasmon-resonance via phase interrogation at optimal incident wavelengths

  It is demonstrated that ultrahigh-resolution angular measurement can be achieved via surface-plasmon-resonance excitation in which the phase difference between p- and s-polarized reflected waves is monitored ...

  Citation × Citation Citation Abstract Copy Title: High-resolution angular measurement using surface-plasmon-resonance via phase interrogation at optimal incident wavelengths Author: Leung, P.T., Chiang, Hai-Pang, Lin, Jing-Lun, Chang, Railing, Su, Sheng-Yu Year: 2005 It is demonstrated that ultrahigh-resolution angular measurement can be achieved via surface-plasmon-resonance excitation in which the phase difference between p- and s-polarized reflected waves is monitored as a function of the incidence angle. Resolutions down to 1.9 x 10(-6) deg are obtained by performing the measurements at optimal incident wavelengths. This represents an order of magnitude improvement compared with previously reported values. Title: High-resolution angular measurement using surface-plasmon-resonance via phase interrogation at optimal incident wavelengths Author: Leung, P.T., Chiang, Hai-Pang, Lin, Jing-Lun, Chang, Railing, Su, Sheng-Yu Year: 2005 It is demonstrated that ultrahigh-resolution angular measurement can be achieved via surface-plasmon-resonance excitation in which the phase difference between p- and s-polarized reflected waves is monitored as a function of the incidence angle. Resolutions down to 1.9 x 10(-6) deg are obtained by performing the measurements at optimal incident wavelengths. This represents an order of magnitude improvement compared with previously reported values. Close

• 6. [Article] Measurements of Methane Emissions from Rice Fields in China

  Rice fields have always been regarded as one of the largest anthropogenic sources of atmospheric methane. Here we report the results of a 7-year study of methane emissions from rice fields in the Sichuan ...

  Citation × Citation Citation Abstract Copy Title: Measurements of Methane Emissions from Rice Fields in China Author: Khalil, M. A. K., Rasmussen, R. A., Shearer, Martha J., Dalluge, R. W., Ren, Lixin, Duan, Chang-Lin Year: 1998 Rice fields have always been regarded as one of the largest anthropogenic sources of atmospheric methane. Here we report the results of a 7-year study of methane emissions from rice fields in the Sichuan Province of China. In this region, there is one crop of rice per year, the fields are continuously flooded from transplanting to harvest, and there is heavy use of organic fertilizers. Emissions over the entire growing season were measured from each of up to 24 plots. Environmental variables were measured and relevant supporting data on the agricultural practices were recorded. The fields were studied under prevailing agricultural practices of the local farmers. The results represent emissions under standard agricultural practices and the year to year variability of climate, fertilizers, available irrigation water, and cultivars. Based on some 5000 flux measurements, the average emission rates between 1988 and 1994 were 30 mg/m²/h for a growing season of between 100 and 120 days. This emission rate is comparable to other published data from similar rice fields but somewhat on the high side of the range. There were no systematic trends of emissions during the 7 years of our experiment, but there was substantial year to year variability. The data have been subjected to exhaustive analyses for validity, accuracy, and reliability. From this, a high-quality, spatially averaged data set has been constructed representing average emissions from the rice fields for each day when measurements were taken. We describe here the main observational results and document the spatial and temporal variability observed on timescales ranging from a day to several years and on spatial scales ranging from 0.5 m² to 16 m². Title: Measurements of Methane Emissions from Rice Fields in China Author: Khalil, M. A. K., Rasmussen, R. A., Shearer, Martha J., Dalluge, R. W., Ren, Lixin, Duan, Chang-Lin Year: 1998 Rice fields have always been regarded as one of the largest anthropogenic sources of atmospheric methane. Here we report the results of a 7-year study of methane emissions from rice fields in the Sichuan Province of China. In this region, there is one crop of rice per year, the fields are continuously flooded from transplanting to harvest, and there is heavy use of organic fertilizers. Emissions over the entire growing season were measured from each of up to 24 plots. Environmental variables were measured and relevant supporting data on the agricultural practices were recorded. The fields were studied under prevailing agricultural practices of the local farmers. The results represent emissions under standard agricultural practices and the year to year variability of climate, fertilizers, available irrigation water, and cultivars. Based on some 5000 flux measurements, the average emission rates between 1988 and 1994 were 30 mg/m²/h for a growing season of between 100 and 120 days. This emission rate is comparable to other published data from similar rice fields but somewhat on the high side of the range. There were no systematic trends of emissions during the 7 years of our experiment, but there was substantial year to year variability. The data have been subjected to exhaustive analyses for validity, accuracy, and reliability. From this, a high-quality, spatially averaged data set has been constructed representing average emissions from the rice fields for each day when measurements were taken. We describe here the main observational results and document the spatial and temporal variability observed on timescales ranging from a day to several years and on spatial scales ranging from 0.5 m² to 16 m². Close

• 7. [Article] High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels

  Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental ...

  Citation × Citation Citation Abstract Copy Title: High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels Author: Lampert, Lester Florian Year: 2017 Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demostrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured [Delta]RNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics. Title: High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels Author: Lampert, Lester Florian Year: 2017 Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demostrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured [Delta]RNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics. Close

• 8. [Article] Dark Current Measurements in a CMOS Imager

  We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ...

  Citation × Citation Citation Abstract Copy Title: Dark Current Measurements in a CMOS Imager Author: Porter, William C., Kopp, Bradley, Dunlap, Justin Charles, Widenhorn, Ralf, Bodegom, Erik Year: 2008 We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count. Title: Dark Current Measurements in a CMOS Imager Author: Porter, William C., Kopp, Bradley, Dunlap, Justin Charles, Widenhorn, Ralf, Bodegom, Erik Year: 2008 We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count. Close

• 9. [Article] Factors Affecting Methane Emissions from Rice Fields

  Methane emissions from rice fields are affected by a number of environmental and agricultural factors. We have analyzed our 7-year data set on methane emissions from rice fields in Tu Zu, China, to delineate ...

  Citation × Citation Citation Abstract Copy Title: Factors Affecting Methane Emissions from Rice Fields Author: Khalil, M. A. K., Rasmussen, R. A., Shearer, Martha J., Dalluge, R. W., Ren, Lixin, Duan, Chang-Lin Year: 1998 Methane emissions from rice fields are affected by a number of environmental and agricultural factors. We have analyzed our 7-year data set on methane emissions from rice fields in Tu Zu, China, to delineate the relationships between emissions and a number of variables that were measured at the same time. Our work was done in fields that were managed under prevailing agricultural practices of the region. Consequently, only the effect of factors that vary from year to year or during the growing season can be calculated. In our study we measured the effects of environmental variables (soil temperature, wind speed, sky cover) and agricultural factors (planting density, water level, rice cultivars, organic fertilizer amounts, yield). Of these variables, soil temperature had the most significant effect on methane emissions resulting in Q₁₀ values of about 2 (1.5–3). The effect of sky cover, and even water levels, was to change the soil temperature, which in turn affected the methane flux. Wind tended to increase emissions, possibly by agitation of the soil. Of the agricultural variables, planting density had the most significant but complex effect on methane emissions. We studied emissions from up to 4 times the normal planting density under otherwise similar agricultural conditions in the same fields. For a four fold increase in planting density the seasonal average emissions increased by about a factor of 2. Rice cultivars had a small but detectable effect. The amount of organic fertilizer and the yields did not affect methane emissions in our fields. The lack of an effect from the fertilizers is attributed to a saturation phenomenon whereby methane emissions do not respond to continual increases in organic material after some sufficiently high level. Title: Factors Affecting Methane Emissions from Rice Fields Author: Khalil, M. A. K., Rasmussen, R. A., Shearer, Martha J., Dalluge, R. W., Ren, Lixin, Duan, Chang-Lin Year: 1998 Methane emissions from rice fields are affected by a number of environmental and agricultural factors. We have analyzed our 7-year data set on methane emissions from rice fields in Tu Zu, China, to delineate the relationships between emissions and a number of variables that were measured at the same time. Our work was done in fields that were managed under prevailing agricultural practices of the region. Consequently, only the effect of factors that vary from year to year or during the growing season can be calculated. In our study we measured the effects of environmental variables (soil temperature, wind speed, sky cover) and agricultural factors (planting density, water level, rice cultivars, organic fertilizer amounts, yield). Of these variables, soil temperature had the most significant effect on methane emissions resulting in Q₁₀ values of about 2 (1.5–3). The effect of sky cover, and even water levels, was to change the soil temperature, which in turn affected the methane flux. Wind tended to increase emissions, possibly by agitation of the soil. Of the agricultural variables, planting density had the most significant but complex effect on methane emissions. We studied emissions from up to 4 times the normal planting density under otherwise similar agricultural conditions in the same fields. For a four fold increase in planting density the seasonal average emissions increased by about a factor of 2. Rice cultivars had a small but detectable effect. The amount of organic fertilizer and the yields did not affect methane emissions in our fields. The lack of an effect from the fertilizers is attributed to a saturation phenomenon whereby methane emissions do not respond to continual increases in organic material after some sufficiently high level. Close