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• 1. [Article] Approximate Equations of State in Two-Temperature Plasma Mixtures

  Approximate thermodynamic state relations for multicomponent atomic and molecular gas mixtures are often constructed by artificially partitioning the mixture into its constituent materials and requiring ...

  Citation × Citation Citation Abstract Copy Title: Approximate Equations of State in Two-Temperature Plasma Mixtures Author: Ramshaw, John D., Cook, Andrew W. Year: 2014 Approximate thermodynamic state relations for multicomponent atomic and molecular gas mixtures are often constructed by artificially partitioning the mixture into its constituent materials and requiring the separated materials to be in temperature and pressure equilibrium. Iterative numerical algorithms have been employed to enforce this equilibration and compute the resulting approximate state relations in single-temperature mixtures. In partially ionized gas mixtures, there is both theoretical and empirical evidence that equilibrating the chemical potentials, number densities, or partial pressures of the free electrons is likely to produce more accurate results than equilibrating the total pressures. Moreover, in many situations of practical interest the free electrons and heavy particles have different temperatures. In this paper, we present a generalized algorithm for equilibrating the heavy-particle and electron temperaturesand a third user-specified independent thermodynamic variable in a two-temperature plasmamixture. Test calculations based on the equilibration of total pressure vs. electron pressure are presented for three different mixtures. Title: Approximate Equations of State in Two-Temperature Plasma Mixtures Author: Ramshaw, John D., Cook, Andrew W. Year: 2014 Approximate thermodynamic state relations for multicomponent atomic and molecular gas mixtures are often constructed by artificially partitioning the mixture into its constituent materials and requiring the separated materials to be in temperature and pressure equilibrium. Iterative numerical algorithms have been employed to enforce this equilibration and compute the resulting approximate state relations in single-temperature mixtures. In partially ionized gas mixtures, there is both theoretical and empirical evidence that equilibrating the chemical potentials, number densities, or partial pressures of the free electrons is likely to produce more accurate results than equilibrating the total pressures. Moreover, in many situations of practical interest the free electrons and heavy particles have different temperatures. In this paper, we present a generalized algorithm for equilibrating the heavy-particle and electron temperaturesand a third user-specified independent thermodynamic variable in a two-temperature plasmamixture. Test calculations based on the equilibration of total pressure vs. electron pressure are presented for three different mixtures. Close

• 2. [Article] The Effect of Plasma on Graphene Quality in an Inductively Couple Plasma Chemical Vapor Deposition Reactor

  Despite continued interest in research and application development, full scale graphene production is still limited by many factors including prohibitively high growth temperature requirements. Extremely ...

  Citation × Citation Citation Abstract Copy Title: The Effect of Plasma on Graphene Quality in an Inductively Couple Plasma Chemical Vapor Deposition Reactor Author: Coyne, Brendan Year: 2017 Despite continued interest in research and application development, full scale graphene production is still limited by many factors including prohibitively high growth temperature requirements. Extremely high quality graphene growth is possible at high temperatures using chemical vapor deposition (CVD). Use of an inductively coupled plasma chemical vapor deposition (ICP CVD) reactor with the benefit of precursor gas decomposition through plasma generation, may provide possibility to reduce growth temperature. Herein, we report plasma’s effects on graphene growth by comparing growths of increasing power supplied to plasma generation and changes in precursor gas ratios. Plasma composition was characterized by ultraviolet and visible light spectroscopy; graphene was characterized by Raman spectroscopy. Plasma was observed to change gradually and in a threshold shift. Gradual changes in plasma resulted in changes in graphene quality, both defect density and number of layers. The shift produced sudden changes in graphene quality. Further, increasing power before and after the shift produced opposite correlated trends. Finally, reduced hydrogen to acetylene gas ratios produced plasma associated with higher powers at a higher gas ratio. Though the comparative plasma spectra between the two reduced gas ratio growths were very similar, the quality of graphene was different. Additionally, both lower gas ratio growths produced quality different than what was expected by the trends suggested by the higher gas ratio growths. Though plasma demonstrated a role in graphene quality, a more detailed understand of its driving mechanisms must be developed in conjunction with other growth mechanisms if it is to be utilized to substantially reduce growth temperature. Title: The Effect of Plasma on Graphene Quality in an Inductively Couple Plasma Chemical Vapor Deposition Reactor Author: Coyne, Brendan Year: 2017 Despite continued interest in research and application development, full scale graphene production is still limited by many factors including prohibitively high growth temperature requirements. Extremely high quality graphene growth is possible at high temperatures using chemical vapor deposition (CVD). Use of an inductively coupled plasma chemical vapor deposition (ICP CVD) reactor with the benefit of precursor gas decomposition through plasma generation, may provide possibility to reduce growth temperature. Herein, we report plasma’s effects on graphene growth by comparing growths of increasing power supplied to plasma generation and changes in precursor gas ratios. Plasma composition was characterized by ultraviolet and visible light spectroscopy; graphene was characterized by Raman spectroscopy. Plasma was observed to change gradually and in a threshold shift. Gradual changes in plasma resulted in changes in graphene quality, both defect density and number of layers. The shift produced sudden changes in graphene quality. Further, increasing power before and after the shift produced opposite correlated trends. Finally, reduced hydrogen to acetylene gas ratios produced plasma associated with higher powers at a higher gas ratio. Though the comparative plasma spectra between the two reduced gas ratio growths were very similar, the quality of graphene was different. Additionally, both lower gas ratio growths produced quality different than what was expected by the trends suggested by the higher gas ratio growths. Though plasma demonstrated a role in graphene quality, a more detailed understand of its driving mechanisms must be developed in conjunction with other growth mechanisms if it is to be utilized to substantially reduce growth temperature. Close

• 3. [Article] On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment

  We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the ...

  Citation × Citation Citation Abstract Copy Title: On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment Author: Keating, Chris M., Charlton, M., Straton, Jack C. Year: 2014 We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the principle of detailed balance. The ion can potentially be created using interactions of positrons with trapped antihydrogen, and our analysis includes a discussion in which estimates of production rates are given. Motivations to produce include its potential use as an intermediary to cool antihydrogen to ultra-cold (sub-mK) temperatures for a variety of studies, including spectroscopy and probing the gravitational interaction of the anti-atom. Title: On the Production of the Positive Antihydrogen Ion H̄+ via Radiative Attachment Author: Keating, Chris M., Charlton, M., Straton, Jack C. Year: 2014 We provide an estimate of the cross section for the radiative attachment of a second positron into the state of the ion using Ohmura and Ohmura's (1960 Phys. Rev. 118 154) effective range theory and the principle of detailed balance. The ion can potentially be created using interactions of positrons with trapped antihydrogen, and our analysis includes a discussion in which estimates of production rates are given. Motivations to produce include its potential use as an intermediary to cool antihydrogen to ultra-cold (sub-mK) temperatures for a variety of studies, including spectroscopy and probing the gravitational interaction of the anti-atom. Close

• 4. [Article] Interpreting Activation Energies in Digital Image Sensors

  We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the ...

  Citation × Citation Citation Abstract Copy Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Title: Interpreting Activation Energies in Digital Image Sensors Author: Dunlap, Justin C., Blouke, Morley M., Bodegom, Erik, Widenhorn, Ralf Year: 2015 We present a study demonstrating the dependence of apparent activation energies on signal charge in digital image sensors. The data presented in this paper are for a charge-coupled device imager, but the analysis can be applied to CMOS sensors or generally to any system that shows nonlinearity with respect to time. Activation energies for some pixels are observed to vary between values at about half the bandgap of silicon, when calculated at low signal-charge levels, to values approaching the bandgap when calculated at high signal-charge levels. As such, the traditional method of calculating activation energies using a single exposure time at varying temperatures will result in different activation energies dependent on the exposure time chosen, making it difficult to draw physically meaningful conclusions from its value. Therefore, a method of calculating activation energies using a single signal-charge level is proposed, making it easier to correlate activation energies with impurities. Further, we demonstrate how a model of a pixel with a fixed location impurity in conjunction with a moving depletion edge, due to a changing depletion region size, can lead to this behavior. Close

• 5. [Article] Laser as a Tool to Study Radiation Effects in CMOS

  Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology ...

  Citation × Citation Citation Abstract Copy Title: Laser as a Tool to Study Radiation Effects in CMOS Author: Ajdari, Bahar Year: 2017 Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology advances, and chip reliability has become more important than ever. Particle accelerator testing has been the standard method to characterize the sensitivity of chips to single event upsets (SEUs). However, because of their costs and availability limitations, other techniques have been explored. Pulsed laser has been a successful tool for characterization of SEU behavior, but to this day, laser has not been recognized as a comparable method to beam testing. In this thesis, I propose a methodology of correlating laser soft error rate (SER) to particle beam gathered data. Additionally, results are presented showing a temperature dependence of SER and the "neighbor effect" phenomenon where due to the close proximity of devices a "weakening effect" in the ON state can be observed. Title: Laser as a Tool to Study Radiation Effects in CMOS Author: Ajdari, Bahar Year: 2017 Energetic particles from cosmic ray or terrestrial sources can strike sensitive areas of CMOS devices and cause soft errors. Understanding the effects of such interactions is crucial as the device technology advances, and chip reliability has become more important than ever. Particle accelerator testing has been the standard method to characterize the sensitivity of chips to single event upsets (SEUs). However, because of their costs and availability limitations, other techniques have been explored. Pulsed laser has been a successful tool for characterization of SEU behavior, but to this day, laser has not been recognized as a comparable method to beam testing. In this thesis, I propose a methodology of correlating laser soft error rate (SER) to particle beam gathered data. Additionally, results are presented showing a temperature dependence of SER and the "neighbor effect" phenomenon where due to the close proximity of devices a "weakening effect" in the ON state can be observed. Close

• 6. [Article] Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure

  Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, ...

  Citation × Citation Citation Abstract Copy Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Close

• 7. [Article] Improved Gain Stability of a Digital Imager Using a Charge Feedback Amplifier

  Digital imagers including Charge-Coupled Devices (CCD) are essential to most forms of modern photographic technologies. The quality of the data produced by digital imagers have made them an invaluable ...

  Citation × Citation Citation Abstract Copy Title: Improved Gain Stability of a Digital Imager Using a Charge Feedback Amplifier Author: Mylott, Elliot Eckman Year: 2015 Digital imagers including Charge-Coupled Devices (CCD) are essential to most forms of modern photographic technologies. The quality of the data produced by digital imagers have made them an invaluable scientific measurement tool. Despite the numerous advantages of digital imagers, there are still factors that limit their performance. One such factor is the stability of the camera's gain, the ratio that dictates the imager's ability to convert incident photons to a measurable output voltage. Variations in gain can affect the linearity of the device and produce inaccurate measurements. One of the factors that determines the gain of the camera is the sensitivity of the output amplifier. The purpose of this study is to compare the performance of two different output amplifier structures: the traditional source follower (SF) and the charge feedback amplifier (CFA). In studies of other solid state detectors, the CFA has shown a greater stability against variations in certain system parameters and environmental conditions such as operating temperature. It is thought that the CFA shows a superior stability over the SF, because the gain of the SF is dependent on multiple capacitances associated with the reset and output transistors, whereas the CFA gain is only dependent on its feedback capacitance. Furthermore, the CFA is able to handle a larger amount of charge than the SF, which increases the dynamic range of the output amplifier. In this research, output amplifier stability is measured using gain and linearity data collected from a CCD manufactured with both types of amplifiers. Preliminary data is presented that indicates the CFA exhibits a greater linearity, larger dynamic range, and a more stable gain than the SF. Despite this the CFA suffers from a significantly larger level of noise. Suggestions for future research are also given as to how to verify and expand upon the results presented here. Title: Improved Gain Stability of a Digital Imager Using a Charge Feedback Amplifier Author: Mylott, Elliot Eckman Year: 2015 Digital imagers including Charge-Coupled Devices (CCD) are essential to most forms of modern photographic technologies. The quality of the data produced by digital imagers have made them an invaluable scientific measurement tool. Despite the numerous advantages of digital imagers, there are still factors that limit their performance. One such factor is the stability of the camera's gain, the ratio that dictates the imager's ability to convert incident photons to a measurable output voltage. Variations in gain can affect the linearity of the device and produce inaccurate measurements. One of the factors that determines the gain of the camera is the sensitivity of the output amplifier. The purpose of this study is to compare the performance of two different output amplifier structures: the traditional source follower (SF) and the charge feedback amplifier (CFA). In studies of other solid state detectors, the CFA has shown a greater stability against variations in certain system parameters and environmental conditions such as operating temperature. It is thought that the CFA shows a superior stability over the SF, because the gain of the SF is dependent on multiple capacitances associated with the reset and output transistors, whereas the CFA gain is only dependent on its feedback capacitance. Furthermore, the CFA is able to handle a larger amount of charge than the SF, which increases the dynamic range of the output amplifier. In this research, output amplifier stability is measured using gain and linearity data collected from a CCD manufactured with both types of amplifiers. Preliminary data is presented that indicates the CFA exhibits a greater linearity, larger dynamic range, and a more stable gain than the SF. Despite this the CFA suffers from a significantly larger level of noise. Suggestions for future research are also given as to how to verify and expand upon the results presented here. Close

• 8. [Article] An Analysis of the Optimal Mix of Global Energy Resources and the Potential Need for Geoengineering Using the CEAGOM Model

  Humanity faces tremendous challenges as a result of anthropogenic climate change caused by greenhouse gas emissions. The mix of resources deployed in order to meet the energy needs of a growing global ...

  Citation × Citation Citation Abstract Copy Title: An Analysis of the Optimal Mix of Global Energy Resources and the Potential Need for Geoengineering Using the CEAGOM Model Author: Anasis, John George, Khalil, M. A. K., Lendaris, George G., Butenhoff, Christopher L., Bluffstone, Randall Year: 2017 Humanity faces tremendous challenges as a result of anthropogenic climate change caused by greenhouse gas emissions. The mix of resources deployed in order to meet the energy needs of a growing global population is key to addressing the climate change issue. The goal of this research is to examine the optimal mix of energy resources that should be deployed to meet a forecast global energy demand while still meeting desired climate targets. The research includes the unique feature of examining the role that geoengineering can play in this optimization. The results show that some form of geoengineering is likely to be needed by the middle of the 21st century as part of the optimal energy strategy in order to meet a specified climate goal of 580 ppm CO2-eq greenhouse gas concentration (or ≈2 °C average global temperature rise). The optimal energy mix would need to rely on energy efficiency, nuclear, geothermal, hydro, and wind energy for over 50% of global energy needs. In addition, the overall cost of the optimal energy mix is sensitive to the assumed amount of achievable energy efficiency, carbon taxes, deployment of electric vehicles, and the assumed discount rate. Title: An Analysis of the Optimal Mix of Global Energy Resources and the Potential Need for Geoengineering Using the CEAGOM Model Author: Anasis, John George, Khalil, M. A. K., Lendaris, George G., Butenhoff, Christopher L., Bluffstone, Randall Year: 2017 Humanity faces tremendous challenges as a result of anthropogenic climate change caused by greenhouse gas emissions. The mix of resources deployed in order to meet the energy needs of a growing global population is key to addressing the climate change issue. The goal of this research is to examine the optimal mix of energy resources that should be deployed to meet a forecast global energy demand while still meeting desired climate targets. The research includes the unique feature of examining the role that geoengineering can play in this optimization. The results show that some form of geoengineering is likely to be needed by the middle of the 21st century as part of the optimal energy strategy in order to meet a specified climate goal of 580 ppm CO2-eq greenhouse gas concentration (or ≈2 °C average global temperature rise). The optimal energy mix would need to rely on energy efficiency, nuclear, geothermal, hydro, and wind energy for over 50% of global energy needs. In addition, the overall cost of the optimal energy mix is sensitive to the assumed amount of achievable energy efficiency, carbon taxes, deployment of electric vehicles, and the assumed discount rate. Close

• 9. [Article] Wavelet Analysis of Northeastern United States Climate Data

  59 pages. A thesis presented to the Department of Physics and the Clark Honors College of the University of Oregon in partial fulfillment of the requirements for degree of Bachelor of Science, Summer 2...

  Citation × Citation Citation Abstract Copy Title: Wavelet Analysis of Northeastern United States Climate Data Author: Womack, Michael Thomas Year: 2017 59 pages. A thesis presented to the Department of Physics and the Clark Honors College of the University of Oregon in partial fulfillment of the requirements for degree of Bachelor of Science, Summer 2017 Title: Wavelet Analysis of Northeastern United States Climate Data Author: Womack, Michael Thomas Year: 2017 59 pages. A thesis presented to the Department of Physics and the Clark Honors College of the University of Oregon in partial fulfillment of the requirements for degree of Bachelor of Science, Summer 2017 Close

• 10. [Article] High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels

  Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental ...

  Citation × Citation Citation Abstract Copy Title: High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels Author: Lampert, Lester Florian Year: 2017 Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demostrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured [Delta]RNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics. Title: High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels Author: Lampert, Lester Florian Year: 2017 Spintronics reaches beyond typical charge-based information storage technologies by utilizing an addressable degree of freedom for electron manipulation, the electron spin polarization. With mounting experimental data and improved theoretical understanding of spin manipulation, spintronics has become a potential alternative to charge-based technologies. However, for a long time, spintronics was not thought to be feasible without the ability to electrostatically control spin conductance at room temperature. Only recently, graphene, a 2D honeycomb crystalline allotrope of carbon only one atom thick, was identified because of its predicted, long spin coherence length and experimentally realized electrostatic gate tunability. However, there exist several challenges with graphene spintronics implementation including weak spin-orbit coupling that provides excellent spin transfer yet prevents charge to spin current conversion, and a conductivity mismatch due to the large difference in carrier density between graphene and a ferromagnet (FM) that must be mitigated by use of a tunnel barrier contact. Additionally, the usage of graphene produced via CVD methods amenable to semiconductor industry in conjunction with graphene spin valve fabrication must be explored in order to promote implementation of graphene-based spintronics. Despite advances in the area of graphene-based spintronics, there is a lack of understanding regarding the coupling of industry-amenable techniques for both graphene synthesis and lateral spin valve fabrication. In order to make any impact on the application of graphene spintronics in industry, it is critical to demonstrate wafer-scale graphene spin devices enabled by wafer-scale graphene synthesis, which utilizes thin film, wafer-supported CVD growth methods. In this work, high-quality graphene was synthesized using a vertical cold-wall furnace and catalyst confinement on both SiO2/Si and C-plane sapphire wafers and the implementation of the as-grown graphene for fabrication of graphene-based non-local spin valves was examined. Optimized CVD graphene was demostrated to have ID/G ≈ 0.04 and I2D/G ≈ 2.3 across a 2" diameter graphene film with excellent continuity and uniformity. Since high-quality, large-area, and continuous CVD graphene was grown, it enabled the fabrication of large device arrays with 40 individually addressable non-local spin valves exhibiting 83% yield. Using these arrays, the effects of channel width and length, ferromagnetic-tunnel barrier width, tunnel barrier thickness, and level of oxidation for Ti-based tunnel barrier contacts were elucidated. Non-local, in-plane magnetic sweeps resulted in high signal-to-noise ratios with measured [Delta]RNL across the as-fabricated arrays as high as 12 Ω with channel lengths up to 2 µm. In addition to in-plane magnetic field spin signal values, vertical magnetic field precession Hanle effect measurements were conducted. From this, spin transport properties were extracted including: spin polarization efficiency, coherence lifetime, and coherence distance. The evaluation of industry-amenable production methods of both high-quality graphene and lateral graphene non-local spin valves are the first steps toward promoting the feasibility of graphene as a lateral spin transport interconnect material in future spintronics applications. By addressing issues using a holistic approach, from graphene synthesis to spin transport implementation, it is possible to begin assessment of the challenges involved for graphene spintronics. Close