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• 1. [Article] A search for new substrate materials for high temperature superconducting thin films

  Citation × Citation Citation Abstract Copy Title: A search for new substrate materials for high temperature superconducting thin films Author: Hall, Michael Matthews Title: A search for new substrate materials for high temperature superconducting thin films Author: Hall, Michael Matthews Close

• 2. [Article] Cryogenic thin-film electron emitters

  Thin‐film electron emitters are described, which operate below 200°K and below a limiting critical applied voltage (νc) in a stable temperature‐independent regime. Current‐voltage characteristics and normal ...

  Citation × Citation Citation Abstract Copy Title: Cryogenic thin-film electron emitters Author: Smejtek, Pavel, Onn, David G., Silver, M. Year: 1974 Thin‐film electron emitters are described, which operate below 200°K and below a limiting critical applied voltage (νc) in a stable temperature‐independent regime. Current‐voltage characteristics and normal electron energy distributions are presented. Fabrication and operation criteria are outlined. Comparison with temperature‐dependent emitters is made, and possible conduction mechanisms discussed briefly. Title: Cryogenic thin-film electron emitters Author: Smejtek, Pavel, Onn, David G., Silver, M. Year: 1974 Thin‐film electron emitters are described, which operate below 200°K and below a limiting critical applied voltage (νc) in a stable temperature‐independent regime. Current‐voltage characteristics and normal electron energy distributions are presented. Fabrication and operation criteria are outlined. Comparison with temperature‐dependent emitters is made, and possible conduction mechanisms discussed briefly. Close

• 3. [Article] Growth, characterizations and applications of copper sulfide thin films by solution-based processes

  Copper sulfides (Cu[subscript x]S) are compound semiconductor materials that exhibit considerable optical and electrical properties varying significantly as a function of the composition. Copper sulfide ...

  Citation × Citation Citation Abstract Copy Title: Growth, characterizations and applications of copper sulfide thin films by solution-based processes Author: Vas-Umnuay, Paravee Copper sulfides (Cu[subscript x]S) are compound semiconductor materials that exhibit considerable optical and electrical properties varying significantly as a function of the composition. Copper sulfide thin films can be used in many applications, such as solar control coatings, solar cells, photothermal conversion of solar energy, electroconductive coatings, and microwave shielding coatings. A variety of solution-based and vapor-based techniques are suitable for their deposition. Solution-based processes have the advantages of simplicity, low capital cost, and low processing temperature. In this work, copper sulfide thin film deposition by a number of solution-based processes was investigated. These processes include chemical bath deposition (CBD), Microreactor Assisted Solution Deposition (MASD), and PhotoChemical Deposition (PCD). The growth kinetics of copper sulfide thin films by CBD was monitored using an in-situ quartz crystal microbalance for the first time. CBD growth was studied as a function of time, temperature, concentrations of reactants, and pH. The reaction activation energy was determined based on initial growth rates. The result indicates the rate limiting step of the deposition is the chemical reaction rather than mass transport. The structure, morphology, composition and optical absorption of the films were found to depend strongly on the deposition conditions. Results from the study of CBD reactions indicated the need to de-reduce the undesirable homogeneous particle formation. The MASD process was developed to achieve this objective. The continuous flow process together with the microreactor design not only improve the mixing of reactants and provide a better temporal control over the reaction which result in higher quality films and a higher deposition rate. A particle-free flux was obtained after adjusting the key process parameters (concentration of mixed reactants, solution temperature, substrate temperature, and residence time). Significantly improved copper sulfide thin film deposition with a good selectivity of heterogeneous surface reactions was achieved. PCD basically employs the UV illumination to excite the irradiated region of the substrate in a deposition solution. It has the potential to reduce the homogeneous particle formation. We investigated the growth kinetics of copper sulfide thin films by PCD under various deposition conditions (e.g. pH, substrate position, reactant concentration, deposition time, and temperature) that influence on the film properties and characteristics. Moreover a detailed mathematical model that describes the multiple chemical reactions in the deposition mechanism was also developed in this work to have a better understanding of the reaction mechanism. Reaction rate constants were successfully estimated from the experimental data based on this model. The calculated results agree well with the experimental data. This model could serve as a useful tool for the control and optimization of photochemical deposition of copper sulfide thin films. Both CBD and PCD processes suffer from severe homogeneous particle formation which has resulted in lower deposition rate. In contrast, MASD provides good selectivity towards heterogeneous surface deposition using molecular precursors at a much higher deposition rate. Thus MASD process was used to deposit copper sulfide layers on textured substrates with nice conformal coverage. Dense, crack-free CuInSe₂ thin films were fabricated successfully after adding an indium precursor layer, and followed by a selenization process. This approach offers a potential low-cost route to fabricate thin absorber solar cells. Title: Growth, characterizations and applications of copper sulfide thin films by solution-based processes Author: Vas-Umnuay, Paravee Copper sulfides (Cu[subscript x]S) are compound semiconductor materials that exhibit considerable optical and electrical properties varying significantly as a function of the composition. Copper sulfide thin films can be used in many applications, such as solar control coatings, solar cells, photothermal conversion of solar energy, electroconductive coatings, and microwave shielding coatings. A variety of solution-based and vapor-based techniques are suitable for their deposition. Solution-based processes have the advantages of simplicity, low capital cost, and low processing temperature. In this work, copper sulfide thin film deposition by a number of solution-based processes was investigated. These processes include chemical bath deposition (CBD), Microreactor Assisted Solution Deposition (MASD), and PhotoChemical Deposition (PCD). The growth kinetics of copper sulfide thin films by CBD was monitored using an in-situ quartz crystal microbalance for the first time. CBD growth was studied as a function of time, temperature, concentrations of reactants, and pH. The reaction activation energy was determined based on initial growth rates. The result indicates the rate limiting step of the deposition is the chemical reaction rather than mass transport. The structure, morphology, composition and optical absorption of the films were found to depend strongly on the deposition conditions. Results from the study of CBD reactions indicated the need to de-reduce the undesirable homogeneous particle formation. The MASD process was developed to achieve this objective. The continuous flow process together with the microreactor design not only improve the mixing of reactants and provide a better temporal control over the reaction which result in higher quality films and a higher deposition rate. A particle-free flux was obtained after adjusting the key process parameters (concentration of mixed reactants, solution temperature, substrate temperature, and residence time). Significantly improved copper sulfide thin film deposition with a good selectivity of heterogeneous surface reactions was achieved. PCD basically employs the UV illumination to excite the irradiated region of the substrate in a deposition solution. It has the potential to reduce the homogeneous particle formation. We investigated the growth kinetics of copper sulfide thin films by PCD under various deposition conditions (e.g. pH, substrate position, reactant concentration, deposition time, and temperature) that influence on the film properties and characteristics. Moreover a detailed mathematical model that describes the multiple chemical reactions in the deposition mechanism was also developed in this work to have a better understanding of the reaction mechanism. Reaction rate constants were successfully estimated from the experimental data based on this model. The calculated results agree well with the experimental data. This model could serve as a useful tool for the control and optimization of photochemical deposition of copper sulfide thin films. Both CBD and PCD processes suffer from severe homogeneous particle formation which has resulted in lower deposition rate. In contrast, MASD provides good selectivity towards heterogeneous surface deposition using molecular precursors at a much higher deposition rate. Thus MASD process was used to deposit copper sulfide layers on textured substrates with nice conformal coverage. Dense, crack-free CuInSe₂ thin films were fabricated successfully after adding an indium precursor layer, and followed by a selenization process. This approach offers a potential low-cost route to fabricate thin absorber solar cells. Close

• 4. [Article] A study of ZnS:Mn electroluminescent phosphors grown by halide transport chemical vapor deposition

  A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source ...

  Citation × Citation Citation Abstract Copy Title: A study of ZnS:Mn electroluminescent phosphors grown by halide transport chemical vapor deposition Author: Chen, Chia-Jen A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes electron microprobe and Auger electron spectroscopy. Double-insulating alternating current thin film electroluminescent devices are constructed around the HTCVD phosphors. The devices are studied using electroluminescence (brightness-voltage), photoluminescence and electrical characterization. The luminescent properties of films with a (002) preferred orientation are studied. A maximum electroluminescent brightness of 1475 cd/m² is achieved. The photoluminescence (PL) of ZnS:Mn films grown at different substrate temperatures is compared. The intensity correlates to Mn concentration. Red emission is seen in films grown at lower substrate temperature which have low Mn concentration. Mechanisms proposed in the literature cannot explain the red emission. A blue PL ZnS film intentionally doped with chlorine is achieved. This blue emission is associated with self-activated (SA) emission. Hexagonal and cubic thin-film ZnS:Mn electroluminescent phosphors are grown by HTCVD. Processing conditions, most notably introduction of a H₂S ambient, lead to a change in the preferred orientation and phase of the polycrystalline thin film. In addition to the commonly reported growth along the closest packed plane [(111) for cubic crystal structure or (002) for hexagonal], thin films have been grown along the less dense cubic (311) direction. The electrical characterization of ZnS:Mn ACTFEL devices with phosphors having different structure and preferred orientation is studied. A comparison of different preferred orientations and structures on conduction charge, obtained by internal charge-phosphor field (Q-F[subscript]p), is performed. When grown in the (311) direction, the conduction charge of a ZnS:Mn ACTFEL device increases from 2.3 μC/cm² to 5.0 μC/cm². Moreover, the leakage charge, Q[subscript]l[subscript]e[subscript]a[subscript]k, of the (311) HTCVD films is small compared to other devices. Title: A study of ZnS:Mn electroluminescent phosphors grown by halide transport chemical vapor deposition Author: Chen, Chia-Jen A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes electron microprobe and Auger electron spectroscopy. Double-insulating alternating current thin film electroluminescent devices are constructed around the HTCVD phosphors. The devices are studied using electroluminescence (brightness-voltage), photoluminescence and electrical characterization. The luminescent properties of films with a (002) preferred orientation are studied. A maximum electroluminescent brightness of 1475 cd/m² is achieved. The photoluminescence (PL) of ZnS:Mn films grown at different substrate temperatures is compared. The intensity correlates to Mn concentration. Red emission is seen in films grown at lower substrate temperature which have low Mn concentration. Mechanisms proposed in the literature cannot explain the red emission. A blue PL ZnS film intentionally doped with chlorine is achieved. This blue emission is associated with self-activated (SA) emission. Hexagonal and cubic thin-film ZnS:Mn electroluminescent phosphors are grown by HTCVD. Processing conditions, most notably introduction of a H₂S ambient, lead to a change in the preferred orientation and phase of the polycrystalline thin film. In addition to the commonly reported growth along the closest packed plane [(111) for cubic crystal structure or (002) for hexagonal], thin films have been grown along the less dense cubic (311) direction. The electrical characterization of ZnS:Mn ACTFEL devices with phosphors having different structure and preferred orientation is studied. A comparison of different preferred orientations and structures on conduction charge, obtained by internal charge-phosphor field (Q-F[subscript]p), is performed. When grown in the (311) direction, the conduction charge of a ZnS:Mn ACTFEL device increases from 2.3 μC/cm² to 5.0 μC/cm². Moreover, the leakage charge, Q[subscript]l[subscript]e[subscript]a[subscript]k, of the (311) HTCVD films is small compared to other devices. Close

• 5. [Article] Refractory Amorphous Metal Thin Films

  Amorphous metal thin films lack the grain boundaries and dislocations present in crystalline metal films. As a result, amorphous metal films can be more mechanically robust, atomically smooth, and more ...

  Citation × Citation Citation Abstract Copy Title: Refractory Amorphous Metal Thin Films Author: Olsen, Kristopher R. Amorphous metal thin films lack the grain boundaries and dislocations present in crystalline metal films. As a result, amorphous metal films can be more mechanically robust, atomically smooth, and more resistant to chemical attack than crystalline metals. However, amorphous metals are meta-stable and subject to crystallization upon heating, thus limiting their usefulness in applications where materials processing and or environmental conditions involve the heating of materials to high temperatures. This thesis explores the relationship between composition and thermal stability in an attempt to find amorphous metal materials that can resist crystallization at higher temperature. As a result, a new class of tantalum and silicon-based amorphous metal film materials has been designed, including TaNiSi, TaMoSi, and TaWSi. The effect of both refractory metal and metalloid content is tested and discussed as the morphology, thermal stability, electrical properties, and thermal oxidation of amorphous metal films are characterized. Title: Refractory Amorphous Metal Thin Films Author: Olsen, Kristopher R. Amorphous metal thin films lack the grain boundaries and dislocations present in crystalline metal films. As a result, amorphous metal films can be more mechanically robust, atomically smooth, and more resistant to chemical attack than crystalline metals. However, amorphous metals are meta-stable and subject to crystallization upon heating, thus limiting their usefulness in applications where materials processing and or environmental conditions involve the heating of materials to high temperatures. This thesis explores the relationship between composition and thermal stability in an attempt to find amorphous metal materials that can resist crystallization at higher temperature. As a result, a new class of tantalum and silicon-based amorphous metal film materials has been designed, including TaNiSi, TaMoSi, and TaWSi. The effect of both refractory metal and metalloid content is tested and discussed as the morphology, thermal stability, electrical properties, and thermal oxidation of amorphous metal films are characterized. Close

• 6. [Article] Hybrid Desktop Processes for Integrated Deposition and Low-cost, In-situ Sintering of Metallic and Non-metallic Conductive Nanoparticles

  Microscale continuous thin films or patterned conductive structures find applications in thin film electronics, energy generation and functional sensor systems. An emerging alternative to conventional ...

  Citation × Citation Citation Abstract Copy Title: Hybrid Desktop Processes for Integrated Deposition and Low-cost, In-situ Sintering of Metallic and Non-metallic Conductive Nanoparticles Author: Bhandari, Roshan Microscale continuous thin films or patterned conductive structures find applications in thin film electronics, energy generation and functional sensor systems. An emerging alternative to conventional vacuum based deposition of such structures is the additive deposition and sintering of conductive nanoparticles, to enable low temperature, low- cost and low energy fabrication. While significant work has gone into additive deposition of nanoparticles, the realization of the above potential needs nanoparticle sintering methods that are equally low-cost, in-situ, ambient condition and desktop- sized in nature. This thesis demonstrates the integration of non-laser based, low-cost and small footprint optical energy sources for ambient condition sintering of conductive nanoparticles, with wide-area aerosol jet based additive printing of nanoparticle inks. The nanoparticle sintering is characterized by quantifying the sintering temperatures, sintered material conductivity, crystallinity, optical properties, thickness and microscale morphology in terms of the sintering parameters. The characterization results of metallic (Ag) and non-metallic conductive (ITO) films indicated densification, increased film conductivity and reduction in film’s optical absorption. This showed that the integrated aerosol jet – continuous wave light (CWL) system is capable of sintering nanoparticles at low-cost, ambient condition and desktop setting. Title: Hybrid Desktop Processes for Integrated Deposition and Low-cost, In-situ Sintering of Metallic and Non-metallic Conductive Nanoparticles Author: Bhandari, Roshan Microscale continuous thin films or patterned conductive structures find applications in thin film electronics, energy generation and functional sensor systems. An emerging alternative to conventional vacuum based deposition of such structures is the additive deposition and sintering of conductive nanoparticles, to enable low temperature, low- cost and low energy fabrication. While significant work has gone into additive deposition of nanoparticles, the realization of the above potential needs nanoparticle sintering methods that are equally low-cost, in-situ, ambient condition and desktop- sized in nature. This thesis demonstrates the integration of non-laser based, low-cost and small footprint optical energy sources for ambient condition sintering of conductive nanoparticles, with wide-area aerosol jet based additive printing of nanoparticle inks. The nanoparticle sintering is characterized by quantifying the sintering temperatures, sintered material conductivity, crystallinity, optical properties, thickness and microscale morphology in terms of the sintering parameters. The characterization results of metallic (Ag) and non-metallic conductive (ITO) films indicated densification, increased film conductivity and reduction in film’s optical absorption. This showed that the integrated aerosol jet – continuous wave light (CWL) system is capable of sintering nanoparticles at low-cost, ambient condition and desktop setting. Close

• 7. [Article] Functional materials for advanced energy and electronic devices

  Advances in energy technologies and electronics have typically occurred through either heightened performance or cost reduction. This dissertation explores both routes through a series of fundamental material ...

  Citation × Citation Citation Abstract Copy Title: Functional materials for advanced energy and electronic devices Author: Flynn, Brendan T. Advances in energy technologies and electronics have typically occurred through either heightened performance or cost reduction. This dissertation explores both routes through a series of fundamental material studies that may contribute to the enabling of next generation devices. Solution based syntheses and deposition of chemical products offer a low cost alternative to conventional vacuum based methods, and is examined through the wet synthesis of CuZnSnS₄ light absorbing nanoparticles. The nanoparticles were synthesized by both microwave-assisted and continuous flow techniques, and at relatively modest temperatures with inexpensive solvents. Varying the initial concentration of precursors allowed a facile method to modify the nanoparticle composition. For the continuous flow system, consideration of fluid flow dynamics provided a means to control the generation of gas within the reactor to allow for improved mixing. Processing of as-deposited solution based films to form more functional variants was studied in further detail by way of the Hf(OH)[subscript 4−2x−2y](O₂)[subscript x](SO₄)[subscript y]·qH₂O (HafSOx) material system. Surface analytical techniques revealed that control of the catalytically active acid sites may be possible with optimization of water exposure and post-exposure annealing temperature of dehydrated films. Thermal and electron stimulated desorption of peroxide containing HafSOx films revealed complex surface dynamics. The total desorption cross sections of O₂ for 500-2000 eV incident electrons was ~10⁻¹⁶ cm². Interfacial formation and chemistry was investigated by evaporating platinum onto amorphous indium gallium zinc oxide, an increasingly common interface type found in memristors and other novel electronics. Metallic indium formed upon platinum deposition, and the interface had an unexpectedly low Schottky barrier height of 0.25 eV, likely as a result of the reactive interface. Finally, the surface properties of highly oriented LaFeO₃ films were characterized and modified through reductive annealing. Iron was found to exist in three oxidation states depending on the annealing temperature and location within the film. In addition, the concentration and types of oxygen species were also found to vary based on proximity to the surface and the thermal treatment. Together, the aforementioned studies are related by the potential manufacturing steps of inexpensive, innovative energy and electronic devices. These steps include solution synthesis and deposition, processing to form a functional film, interface formation, and adapting the film's surface properties to suit its intended application. Title: Functional materials for advanced energy and electronic devices Author: Flynn, Brendan T. Advances in energy technologies and electronics have typically occurred through either heightened performance or cost reduction. This dissertation explores both routes through a series of fundamental material studies that may contribute to the enabling of next generation devices. Solution based syntheses and deposition of chemical products offer a low cost alternative to conventional vacuum based methods, and is examined through the wet synthesis of CuZnSnS₄ light absorbing nanoparticles. The nanoparticles were synthesized by both microwave-assisted and continuous flow techniques, and at relatively modest temperatures with inexpensive solvents. Varying the initial concentration of precursors allowed a facile method to modify the nanoparticle composition. For the continuous flow system, consideration of fluid flow dynamics provided a means to control the generation of gas within the reactor to allow for improved mixing. Processing of as-deposited solution based films to form more functional variants was studied in further detail by way of the Hf(OH)[subscript 4−2x−2y](O₂)[subscript x](SO₄)[subscript y]·qH₂O (HafSOx) material system. Surface analytical techniques revealed that control of the catalytically active acid sites may be possible with optimization of water exposure and post-exposure annealing temperature of dehydrated films. Thermal and electron stimulated desorption of peroxide containing HafSOx films revealed complex surface dynamics. The total desorption cross sections of O₂ for 500-2000 eV incident electrons was ~10⁻¹⁶ cm². Interfacial formation and chemistry was investigated by evaporating platinum onto amorphous indium gallium zinc oxide, an increasingly common interface type found in memristors and other novel electronics. Metallic indium formed upon platinum deposition, and the interface had an unexpectedly low Schottky barrier height of 0.25 eV, likely as a result of the reactive interface. Finally, the surface properties of highly oriented LaFeO₃ films were characterized and modified through reductive annealing. Iron was found to exist in three oxidation states depending on the annealing temperature and location within the film. In addition, the concentration and types of oxygen species were also found to vary based on proximity to the surface and the thermal treatment. Together, the aforementioned studies are related by the potential manufacturing steps of inexpensive, innovative energy and electronic devices. These steps include solution synthesis and deposition, processing to form a functional film, interface formation, and adapting the film's surface properties to suit its intended application. Close

• 8. [Article] Study of Interphase in Polylactic Acid and Cellulose Nanocrystal Composite Films

  Polylactic acid (PLA), a renewable material, is used widely in a variety of commercial and specialty applications. However, certain limitations such as high temperature stability and brittleness limit ...

  Citation × Citation Citation Abstract Copy Title: Study of Interphase in Polylactic Acid and Cellulose Nanocrystal Composite Films Author: Rao, Pratish Ramesh Polylactic acid (PLA), a renewable material, is used widely in a variety of commercial and specialty applications. However, certain limitations such as high temperature stability and brittleness limit its applicability. This problem is addressed by reinforcing PLA with a variety of materials but the process gives rise to different issues in compatibilization due to differences in polarity of materials. In this research, surface of cellulose nanocrystals (CNC's) is modified with lactic acid and lactic acid oligomers and are then incorporated into bulk PLA matrix to form nanocomposite films via solvent casting. This thesis includes verification of grafting reactions onto CNC surface via elemental analysis and solid state NMR along with dispersion studies by SEM imaging. The nanocomposite properties are studied with increasing filler content and type of surface modification and a comparison is made with unfilled PLA films. The interphase between the filler and the matrix is studied by evaluating the mechanical properties and trends are established with reference to the graft length. In addition, DSC and TGA analysis of some composites is included to study any deviations in thermal behavior from expected trends Title: Study of Interphase in Polylactic Acid and Cellulose Nanocrystal Composite Films Author: Rao, Pratish Ramesh Polylactic acid (PLA), a renewable material, is used widely in a variety of commercial and specialty applications. However, certain limitations such as high temperature stability and brittleness limit its applicability. This problem is addressed by reinforcing PLA with a variety of materials but the process gives rise to different issues in compatibilization due to differences in polarity of materials. In this research, surface of cellulose nanocrystals (CNC's) is modified with lactic acid and lactic acid oligomers and are then incorporated into bulk PLA matrix to form nanocomposite films via solvent casting. This thesis includes verification of grafting reactions onto CNC surface via elemental analysis and solid state NMR along with dispersion studies by SEM imaging. The nanocomposite properties are studied with increasing filler content and type of surface modification and a comparison is made with unfilled PLA films. The interphase between the filler and the matrix is studied by evaluating the mechanical properties and trends are established with reference to the graft length. In addition, DSC and TGA analysis of some composites is included to study any deviations in thermal behavior from expected trends Close

• 9. [Article] Solution deposition and characterization of the thin film inorganic materials

  The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type ...

  Citation × Citation Citation Abstract Copy Title: Solution deposition and characterization of the thin film inorganic materials Author: Ozmen, Bahar The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and zinc-doped tin (IV) oxide has been performed by spin coating. Solution deposition of antimony-doped to tin (IV) oxide films was also examined for the production of a conductor. The solution deposition of p-type cuprous oxide thin films has been achieved by spin coating an aqueous precursor of copper (II) formate tetrahydrate (aq) and annealing under nitrogen atmosphere. UV curing has also been used to prepare the films. The solution deposition of silver films is performed with the aim of obtaining a conductive contact for a TFT device. Silver metal films were deposited from solutions of Ag₂O(s) in aqueous ammonia by spin coating method and annealing in air at temperatures as low as 120°C. Title: Solution deposition and characterization of the thin film inorganic materials Author: Ozmen, Bahar The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and zinc-doped tin (IV) oxide has been performed by spin coating. Solution deposition of antimony-doped to tin (IV) oxide films was also examined for the production of a conductor. The solution deposition of p-type cuprous oxide thin films has been achieved by spin coating an aqueous precursor of copper (II) formate tetrahydrate (aq) and annealing under nitrogen atmosphere. UV curing has also been used to prepare the films. The solution deposition of silver films is performed with the aim of obtaining a conductive contact for a TFT device. Silver metal films were deposited from solutions of Ag₂O(s) in aqueous ammonia by spin coating method and annealing in air at temperatures as low as 120°C. Close

• 10. [Article] Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films

  This is the publisher’s final pdf. The published article is copyrighted by The Electrochemical Society and can be found at: http://www.electrochem.org/.

  Citation × Citation Citation Abstract Copy Title: Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films Author: Palo, Daniel R., Chang, Chih-Hung, Su, Yu-Wei, Ramprasad, Sudhir, Paul, Brian K. This is the publisher’s final pdf. The published article is copyrighted by The Electrochemical Society and can be found at: http://www.electrochem.org/. Title: Continuous Microreactor-Assisted Solution Deposition for Scalable Production of CdS Films Author: Palo, Daniel R., Chang, Chih-Hung, Su, Yu-Wei, Ramprasad, Sudhir, Paul, Brian K. This is the publisher’s final pdf. The published article is copyrighted by The Electrochemical Society and can be found at: http://www.electrochem.org/. Close