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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development ...
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2. [Article] Synthesis and characterization of aluminum oxide based materials - from molecule to device
A scalable synthesis of the "flat" tridecameric inorganic cluster [Al₁₃(μ₃-OH)₆(μ-OH)₁₈(H₂O)₂₄]¹⁵⁺ has been realized by treating an aqueous aluminum nitrate solution with zinc-metal powder at room temperature. ...Citation -
Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel layers ...
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This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on ...
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5. [Article] Investigation of low temperature solution-based deposition process for flexible electronics
The critical contribution of this dissertation is to provide a better understanding of the fundamental Chemical Bath Deposition (CBD) growth kinetic and mechanism for the well known II-VI semiconductor ...Citation -
Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs ...
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The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel ...
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8. [Article] Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs
Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. ...Citation