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• 1. [Article] KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic.pdf

  Citation × Citation Citation Abstract Copy Title: KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic.pdf Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. Title: KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic.pdf Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. Close

• 2. [Article] KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic_SupplementaryData.pdf

  Citation × Citation Citation Abstract Copy Title: KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic_SupplementaryData.pdf Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. Title: KeiluweitMarcoCropSoilSciAromaticityDegreeAromatic_SupplementaryData.pdf Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. Close

• 3. [Article] Aromaticity and degree of aromatic condensation of char

  To the best of our knowledge, one or more authors of this paper were federal employees when contributing to this work. This is the publisher’s final pdf. The published article is copyrighted by Elsevier ...

  Citation × Citation Citation Abstract Copy Title: Aromaticity and degree of aromatic condensation of char Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. To the best of our knowledge, one or more authors of this paper were federal employees when contributing to this work. This is the publisher’s final pdf. The published article is copyrighted by Elsevier and can be found at: http://www.journals.elsevier.com/organic-geochemistry. Title: Aromaticity and degree of aromatic condensation of char Author: Kleber, Markus, Wiedemeier, Daniel B., Hockaday, William C., Keiluweit, Marco, Abiven, Samuel, et al. To the best of our knowledge, one or more authors of this paper were federal employees when contributing to this work. This is the publisher’s final pdf. The published article is copyrighted by Elsevier and can be found at: http://www.journals.elsevier.com/organic-geochemistry. Close

• 4. [Article] Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

  Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. ...

  Citation × Citation Citation Abstract Copy Title: Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs Author: Hoshino, Ken Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O₂ is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature. Title: Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs Author: Hoshino, Ken Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O₂ is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature. Close