Search

Search Results

• 51. [Article] Computational Approach to Dark Current Spectroscopy in CCDs as complex systems. II. Numerical Analysis of the Uniqueness Parameters Evaluation

  The evaluation of the uniqueness parameters of the temperature dependence in CCDs is difficult to the considerable number of input parameters and to the strongly nonlinear (exponential) theoretical relations. ...

  Citation × Citation Citation Abstract Copy Title: Computational Approach to Dark Current Spectroscopy in CCDs as complex systems. II. Numerical Analysis of the Uniqueness Parameters Evaluation Author: Tunaru, Ionel, Widenhorn, Ralf, Iordache, Dan A., Bodegom, Erik Year: 2011 The evaluation of the uniqueness parameters of the temperature dependence in CCDs is difficult to the considerable number of input parameters and to the strongly nonlinear (exponential) theoretical relations. For this reason, the elaborated computer programs are very sensitive to the choice of the zero-order approximations of the effective (Si) energy gap, and of the weights associated to the experimentally determined dark current. The main goal of this work was to study the rather narrow stability domains of the zero-order approximations, which lead to attractors with physical meaning. It was found that the stability domains are surrounded by (usually in this order): other fields leading to oscillations, pseudo-convergence (false attractors, described by non-physical values of the studied parameters) or instability fields, which were studied also in detail. Title: Computational Approach to Dark Current Spectroscopy in CCDs as complex systems. II. Numerical Analysis of the Uniqueness Parameters Evaluation Author: Tunaru, Ionel, Widenhorn, Ralf, Iordache, Dan A., Bodegom, Erik Year: 2011 The evaluation of the uniqueness parameters of the temperature dependence in CCDs is difficult to the considerable number of input parameters and to the strongly nonlinear (exponential) theoretical relations. For this reason, the elaborated computer programs are very sensitive to the choice of the zero-order approximations of the effective (Si) energy gap, and of the weights associated to the experimentally determined dark current. The main goal of this work was to study the rather narrow stability domains of the zero-order approximations, which lead to attractors with physical meaning. It was found that the stability domains are surrounded by (usually in this order): other fields leading to oscillations, pseudo-convergence (false attractors, described by non-physical values of the studied parameters) or instability fields, which were studied also in detail. Close

• 52. [Article] Dark Current Measurements in a CMOS Imager

  We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ...

  Citation × Citation Citation Abstract Copy Title: Dark Current Measurements in a CMOS Imager Author: Porter, William C., Kopp, Bradley, Dunlap, Justin Charles, Widenhorn, Ralf, Bodegom, Erik Year: 2008 We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count. Title: Dark Current Measurements in a CMOS Imager Author: Porter, William C., Kopp, Bradley, Dunlap, Justin Charles, Widenhorn, Ralf, Bodegom, Erik Year: 2008 We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count. Close

• 53. [Article] Measurements of dark current in a CCD imager during light exposures

  Thermal excitation of electrons is a major source of noise in Charge-Coupled Device (CCD) imagers. Those electrons are generated even in the absence of light, hence the name dark current. Dark current ...

  Citation × Citation Citation Abstract Copy Title: Measurements of dark current in a CCD imager during light exposures Author: Widenhorn, Ralf, Hartwig, Ines, Dunlap, Justin Charles, Bodegom, Erik Year: 2008 Thermal excitation of electrons is a major source of noise in Charge-Coupled Device (CCD) imagers. Those electrons are generated even in the absence of light, hence the name dark current. Dark current is particularly important for long exposure times and elevated temperatures. The standard procedure to correct for dark current is to take several pictures under the same condition as the real image, except with the shutter closed. The resulting dark frame is later subtracted from the exposed image. We address the question of whether the dark current produced in an image taken with a closed shutter is identical to the dark current produced in an exposure in the presence of light. In our investigation, we illuminated two different CCD chips to different intensities of light and measured the dark current generation. A surprising conclusion of this study is that some pixels produce a different amount of dark current under illumination. Finally, we discuss the implications that this has for dark frame image correction. Title: Measurements of dark current in a CCD imager during light exposures Author: Widenhorn, Ralf, Hartwig, Ines, Dunlap, Justin Charles, Bodegom, Erik Year: 2008 Thermal excitation of electrons is a major source of noise in Charge-Coupled Device (CCD) imagers. Those electrons are generated even in the absence of light, hence the name dark current. Dark current is particularly important for long exposure times and elevated temperatures. The standard procedure to correct for dark current is to take several pictures under the same condition as the real image, except with the shutter closed. The resulting dark frame is later subtracted from the exposed image. We address the question of whether the dark current produced in an image taken with a closed shutter is identical to the dark current produced in an exposure in the presence of light. In our investigation, we illuminated two different CCD chips to different intensities of light and measured the dark current generation. A surprising conclusion of this study is that some pixels produce a different amount of dark current under illumination. Finally, we discuss the implications that this has for dark frame image correction. Close

• 54. [Article] Correction of dark current in consumer cameras

  A study of dark current in digital imagers in digital singlelens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ...

  Citation × Citation Citation Abstract Copy Title: Correction of dark current in consumer cameras Author: Dunlap, Justin Charles, Bodegom, Erik, Widenhorn, Ralf Year: 2010 A study of dark current in digital imagers in digital singlelens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a series of images. DSLR and compact consumer cameras are often designed such that they are contained within a densely packed camera body, and therefore the digital imagers within the camera frame are prone to heat generated by the sensor as well as nearby elements within the camera body. It is the scope of this work to characterize the dark current in such cameras and to show that the dark current, in part due to heat generated by the camera itself, can be corrected by using hot pixels on the imager. This method generates computed dark frames based on the dark current indicator value of the hottest pixels on the chip. We compare this method to standard methods of dark current correction. Title: Correction of dark current in consumer cameras Author: Dunlap, Justin Charles, Bodegom, Erik, Widenhorn, Ralf Year: 2010 A study of dark current in digital imagers in digital singlelens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a series of images. DSLR and compact consumer cameras are often designed such that they are contained within a densely packed camera body, and therefore the digital imagers within the camera frame are prone to heat generated by the sensor as well as nearby elements within the camera body. It is the scope of this work to characterize the dark current in such cameras and to show that the dark current, in part due to heat generated by the camera itself, can be corrected by using hot pixels on the imager. This method generates computed dark frames based on the dark current indicator value of the hottest pixels on the chip. We compare this method to standard methods of dark current correction. Close

• 55. [Article] Copper electrodeposition in a magnetic field

  The effect of a magnetic field on copper electrodeposition was investigated. Copper was electrodeposited onto square copper cathodes 1 sq cm in area from an aqueous solution (0.5 M CuSO4, 0.5 M H2SO. A ...

  Citation × Citation Citation Abstract Copy Title: Copper electrodeposition in a magnetic field Author: Takeo, Hiroshi Year: 1985 The effect of a magnetic field on copper electrodeposition was investigated. Copper was electrodeposited onto square copper cathodes 1 sq cm in area from an aqueous solution (0.5 M CuSO4, 0.5 M H2SO. A glass cell was placed between the pole pieces of an electromagnet, and the magnetic fields applied were in the range from 0 to 12.5 kG. The current density was in the range from 80 mA/sq cm to 880 mA/sq cm. In each of the experiments, cell current, cell voltage, and cell temperature were monitored with a microcomputer. The weight change, deposit surface and cross section morphology, and the hardness were also found. Anodes used in the experiments were studied to see the effect of various conditions on the surface finish. Copper was also electrodeposited onto copper grids in order to study how the uniformity of the deposit is affected by an applied magnetic field. Title: Copper electrodeposition in a magnetic field Author: Takeo, Hiroshi Year: 1985 The effect of a magnetic field on copper electrodeposition was investigated. Copper was electrodeposited onto square copper cathodes 1 sq cm in area from an aqueous solution (0.5 M CuSO4, 0.5 M H2SO. A glass cell was placed between the pole pieces of an electromagnet, and the magnetic fields applied were in the range from 0 to 12.5 kG. The current density was in the range from 80 mA/sq cm to 880 mA/sq cm. In each of the experiments, cell current, cell voltage, and cell temperature were monitored with a microcomputer. The weight change, deposit surface and cross section morphology, and the hardness were also found. Anodes used in the experiments were studied to see the effect of various conditions on the surface finish. Copper was also electrodeposited onto copper grids in order to study how the uniformity of the deposit is affected by an applied magnetic field. Close

• 56. [Article] Characterization and correction of dark current in compact consumer cameras

  A study of dark current in digital imagers within consumer grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown ...

  Citation × Citation Citation Abstract Copy Title: Characterization and correction of dark current in compact consumer cameras Author: Dunlap, Justin Charles, Bodegom, Erik, Widenhorn, Ralf Year: 2010 A study of dark current in digital imagers within consumer grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a series of images. Consumer cameras are often designed to be as compact as possible and therefore the digital imagers within the camera frame are prone to heat generated by nearby elements within the camera body. It is the scope of this work to characterize the dark current in such cameras and to show that the dark current, in part due to heat generated by the camera itself, can be corrected for by using hot pixels on the imager. This method generates computed dark frames based on the dark current indicator value of the hottest pixels on the chip. We compare this method to standard methods of dark current correction. Title: Characterization and correction of dark current in compact consumer cameras Author: Dunlap, Justin Charles, Bodegom, Erik, Widenhorn, Ralf Year: 2010 A study of dark current in digital imagers within consumer grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a series of images. Consumer cameras are often designed to be as compact as possible and therefore the digital imagers within the camera frame are prone to heat generated by nearby elements within the camera body. It is the scope of this work to characterize the dark current in such cameras and to show that the dark current, in part due to heat generated by the camera itself, can be corrected for by using hot pixels on the imager. This method generates computed dark frames based on the dark current indicator value of the hottest pixels on the chip. We compare this method to standard methods of dark current correction. Close

• 57. [Article] Dark current in an active pixel complementary metal-oxide-semiconductor sensor

  We present an analysis of dark current from a complementary metal?oxide?semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection ...

  Citation × Citation Citation Abstract Copy Title: Dark current in an active pixel complementary metal-oxide-semiconductor sensor Author: Dunlap, Justin Charles, Porter, William Christian, Bodegom, Erik, Widenhorn, Ralf Year: 2011 We present an analysis of dark current from a complementary metal?oxide?semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection area of the pixel and another within the sense node, present complications to correction of the dark current. The two sources are shown to generate unique and characteristic dark current behavior with respect to varying exposure time, temperature, and/or frame rate. In particular, a pixel with storage time in the sense node will show a dark current dependence on frame rate and the appearance of being a ?stuck pixel? with values independent of exposure time. On the other hand, a pixel with an impurity located within the collection area will show no frame rate dependence, but rather a linear dependence on exposure time. A method of computing dark frames based on past dark current behavior of the sensor is presented and shown to intrinsically compensate for the two different and unique sources. In addition, dark frames requiring subtraction of negative values, arising from the option to modify the bias offset, are shown to be appropriate and possible using the computational method. Title: Dark current in an active pixel complementary metal-oxide-semiconductor sensor Author: Dunlap, Justin Charles, Porter, William Christian, Bodegom, Erik, Widenhorn, Ralf Year: 2011 We present an analysis of dark current from a complementary metal?oxide?semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection area of the pixel and another within the sense node, present complications to correction of the dark current. The two sources are shown to generate unique and characteristic dark current behavior with respect to varying exposure time, temperature, and/or frame rate. In particular, a pixel with storage time in the sense node will show a dark current dependence on frame rate and the appearance of being a ?stuck pixel? with values independent of exposure time. On the other hand, a pixel with an impurity located within the collection area will show no frame rate dependence, but rather a linear dependence on exposure time. A method of computing dark frames based on past dark current behavior of the sensor is presented and shown to intrinsically compensate for the two different and unique sources. In addition, dark frames requiring subtraction of negative values, arising from the option to modify the bias offset, are shown to be appropriate and possible using the computational method. Close

• 58. [Article] Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells

  Large area rutile TiO₂ nanorod arrays were grown on F:SnO₂ (FTO) conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs) were deposited onto single-crystalline TiO₂ nanorod ...

  Citation × Citation Citation Abstract Copy Title: Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells Author: Li, Yitan, Wei, Lin, Zhang, Ruizi, Chen, Yanxue, Jiao, Jun Year: 2012 Large area rutile TiO₂ nanorod arrays were grown on F:SnO₂ (FTO) conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs) were deposited onto single-crystalline TiO₂ nanorod arrays by a chemical bath deposition (CBD) method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO₂ nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dotssensitized TiO₂ nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO₂ nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment. Title: Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells Author: Li, Yitan, Wei, Lin, Zhang, Ruizi, Chen, Yanxue, Jiao, Jun Year: 2012 Large area rutile TiO₂ nanorod arrays were grown on F:SnO₂ (FTO) conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs) were deposited onto single-crystalline TiO₂ nanorod arrays by a chemical bath deposition (CBD) method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO₂ nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dotssensitized TiO₂ nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO₂ nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment. Close

• 59. [Article] Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure

  Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, ...

  Citation × Citation Citation Abstract Copy Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Close

• 60. [Article] Optimization and Thermodynamic Performance Measures of a Class of Finite Time Thermodynamic Cycles

  Modifications to the quasistatic Carnot cycle are developed in order to formulate improved theoretical bounds on the thermal efficiency of certain refrigeration cycles that produce finite cooling power. ...

  Citation × Citation Citation Abstract Copy Title: Optimization and Thermodynamic Performance Measures of a Class of Finite Time Thermodynamic Cycles Author: Walters, Joseph D. Year: 1990 Modifications to the quasistatic Carnot cycle are developed in order to formulate improved theoretical bounds on the thermal efficiency of certain refrigeration cycles that produce finite cooling power. The modified refrigeration cycle is based on the idealized endoreversible finite time cycle. Two of the four cycle branches are reversible adiabats, and the other two are the high and low temperature branches along which finite heat fluxes couple the refrigeration cycle with external heat reservoirs. This finite time model has been used to obtain the following results: First, the performance of a finite time Carnot refrigeration cycle (FTCRC) is examined. In the special case of equal heat transfer coefficients along heat transfer branches, it is found that by optimizing the FTCRC to maximize thermal efficiency and then evaluating the efficiency at peak cooling power, a new bound on the thermal efficiency of certain refrigeration cycles is given by $\epsilon\sb{m} = (\tilde\tau\sp2\sb{m}\ (T\sb{H}/T\sb{L}) - 1)\sp{-1},$ where $T\sb{H}$ and $T\sb{L}$ are the absolute high and low temperatures of the heat reservoirs, respectively, and $\tilde\tau\sb{m}=\sqrt{2}$ + 1 $\simeq$ 2.41 is the dimensionless cycle period at maximum cooling power. Second, a finite time refrigeration cycle (FTRC) is optimized to obtain four distinct optimal cycling modes that maximize efficiency and cooling power, and minimize power consumption and irreversible entropy production. It is found that to first order in cycling frequency and in the special symmetric case, the maximum efficiency and minimum irreversible entropy production modes are equally efficient. Additionally, simple analytic expressions are obtained for efficiencies at maximum cooling power within each optimal mode. Under certain limiting conditions the bounding efficiency at maximum cooling power shown above is obtained. Third, the problem of imperfect heat switches linking the working fluid of an FTRC to external heat reservoirs is studied. The maximum efficiency cycling mode is obtained by numerically optimizing the FTRC. Two distinct optimum cycling conditions exist: (1) operation at the global maximum in efficiency, and (2) operation at the frequency of maximum cooling power. The efficiency evaluated at maximum cooling power, and the global maximum efficiency may provide improved bench-mark bounds on thermal efficiencies of certain real irreversible refrigeration cycles. Title: Optimization and Thermodynamic Performance Measures of a Class of Finite Time Thermodynamic Cycles Author: Walters, Joseph D. Year: 1990 Modifications to the quasistatic Carnot cycle are developed in order to formulate improved theoretical bounds on the thermal efficiency of certain refrigeration cycles that produce finite cooling power. The modified refrigeration cycle is based on the idealized endoreversible finite time cycle. Two of the four cycle branches are reversible adiabats, and the other two are the high and low temperature branches along which finite heat fluxes couple the refrigeration cycle with external heat reservoirs. This finite time model has been used to obtain the following results: First, the performance of a finite time Carnot refrigeration cycle (FTCRC) is examined. In the special case of equal heat transfer coefficients along heat transfer branches, it is found that by optimizing the FTCRC to maximize thermal efficiency and then evaluating the efficiency at peak cooling power, a new bound on the thermal efficiency of certain refrigeration cycles is given by $\epsilon\sb{m} = (\tilde\tau\sp2\sb{m}\ (T\sb{H}/T\sb{L}) - 1)\sp{-1},$ where $T\sb{H}$ and $T\sb{L}$ are the absolute high and low temperatures of the heat reservoirs, respectively, and $\tilde\tau\sb{m}=\sqrt{2}$ + 1 $\simeq$ 2.41 is the dimensionless cycle period at maximum cooling power. Second, a finite time refrigeration cycle (FTRC) is optimized to obtain four distinct optimal cycling modes that maximize efficiency and cooling power, and minimize power consumption and irreversible entropy production. It is found that to first order in cycling frequency and in the special symmetric case, the maximum efficiency and minimum irreversible entropy production modes are equally efficient. Additionally, simple analytic expressions are obtained for efficiencies at maximum cooling power within each optimal mode. Under certain limiting conditions the bounding efficiency at maximum cooling power shown above is obtained. Third, the problem of imperfect heat switches linking the working fluid of an FTRC to external heat reservoirs is studied. The maximum efficiency cycling mode is obtained by numerically optimizing the FTRC. Two distinct optimum cycling conditions exist: (1) operation at the global maximum in efficiency, and (2) operation at the frequency of maximum cooling power. The efficiency evaluated at maximum cooling power, and the global maximum efficiency may provide improved bench-mark bounds on thermal efficiencies of certain real irreversible refrigeration cycles. Close