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• 1. [Article] Chaotic electron transport in semiconductor devices

  xix, 171 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.

  Citation × Citation Citation Abstract Copy Title: Chaotic electron transport in semiconductor devices Author: Scannell, William Christian, 1970- Year: 2011, 2010 xix, 171 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. Title: Chaotic electron transport in semiconductor devices Author: Scannell, William Christian, 1970- Year: 2011, 2010 xix, 171 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. Close

• 2. [Article] Pressure-induced insulating state in an organic superconductor

  The electronic-transport properties of the quasi-two-dimensional organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃, where BEDT-TTF stands for bisethylenedithio-tetrathiafulvalene, have been investigated ...

  Citation × Citation Citation Abstract Copy Title: Pressure-induced insulating state in an organic superconductor Author: Gard, Gary L., Mohtasham, Javid, Schlueter, J. A., Pfleiderer, C., Wosnitza, J., Hagel, J. Year: 2003 The electronic-transport properties of the quasi-two-dimensional organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃, where BEDT-TTF stands for bisethylenedithio-tetrathiafulvalene, have been investigated in magnetic fields up to 15 T and under hydrostatic pressure up to about 14 kbars. Shubnikov–de Haas data reveal a nonmonotonic pressure dependence of the holelike Fermi surface, a roughly linear increase of the electron g factor, and an approximately linear decrease of the cyclotron effective mass. By assuming that the latter reflects the pressure-induced reduction of the superconducting coupling parameter λ the rapid reduction of the superconducting transition temperature Tc(p) can be reasonably well described by the modified McMillan equation. Above about 12 kbars the material becomes insulating with an activated resistive behavior. This first-order metal-insulator transition has a hysteresis of about 3 kbars. This unexpected behavior is assumed to be of structural origin, although clear changes of electronic band-structure properties precede the phase transition. Title: Pressure-induced insulating state in an organic superconductor Author: Gard, Gary L., Mohtasham, Javid, Schlueter, J. A., Pfleiderer, C., Wosnitza, J., Hagel, J. Year: 2003 The electronic-transport properties of the quasi-two-dimensional organic superconductor β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃, where BEDT-TTF stands for bisethylenedithio-tetrathiafulvalene, have been investigated in magnetic fields up to 15 T and under hydrostatic pressure up to about 14 kbars. Shubnikov–de Haas data reveal a nonmonotonic pressure dependence of the holelike Fermi surface, a roughly linear increase of the electron g factor, and an approximately linear decrease of the cyclotron effective mass. By assuming that the latter reflects the pressure-induced reduction of the superconducting coupling parameter λ the rapid reduction of the superconducting transition temperature Tc(p) can be reasonably well described by the modified McMillan equation. Above about 12 kbars the material becomes insulating with an activated resistive behavior. This first-order metal-insulator transition has a hysteresis of about 3 kbars. This unexpected behavior is assumed to be of structural origin, although clear changes of electronic band-structure properties precede the phase transition. Close