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• 1. [Article] Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices

  As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels ...

  Citation × Citation Citation Abstract Copy Title: Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices Author: Widenhorn, Ralf, Tunaru, Ionel, Bodegom, Erik, Iordache, Dan A. Year: 2010 As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels - the evaluation of a reduced number of basic impurities parameters. Unlike these works, this paper tries to obtain--by means of some better approximations of the Shockley-Read-Hall (SRH) model--more information about the studied impurities, as well as the study of the compatibility of the used theoretical model SRH relative to the experimental data. In this manner, both the compatibility SRH model with the studied experimental data was checked up, as well as the values of some additional physical parameters of the impurified semiconductor (the logarithms of the pre-exponential factors lnDiff, lnDep, the effective value of the energy gap Eg) and of the separate capture cross-sections of the free electrons, and holes, respectively, by the studied deep-level contaminants, were evaluated. Title: Study of the numerical modeling of the temperature dependence of the dark current in Charge Coupled Devices Author: Widenhorn, Ralf, Tunaru, Ionel, Bodegom, Erik, Iordache, Dan A. Year: 2010 As it is well known, the classical works of the Dark Current Spectroscopy method allow - using some not too accurate theoretical relations, but huge numbers of dark current values for thousands of pixels - the evaluation of a reduced number of basic impurities parameters. Unlike these works, this paper tries to obtain--by means of some better approximations of the Shockley-Read-Hall (SRH) model--more information about the studied impurities, as well as the study of the compatibility of the used theoretical model SRH relative to the experimental data. In this manner, both the compatibility SRH model with the studied experimental data was checked up, as well as the values of some additional physical parameters of the impurified semiconductor (the logarithms of the pre-exponential factors lnDiff, lnDep, the effective value of the energy gap Eg) and of the separate capture cross-sections of the free electrons, and holes, respectively, by the studied deep-level contaminants, were evaluated. Close