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Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development ...
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2. [Article] Temperature dependence of optical properties for amorphous silicon at wavelengths of 632.8 and 752 nm
The temperature dependence of the optical properties for amorphous silicon is studied at wavelengths of 632.8 and 752 nm. Both the refractive index and extinction coefficient increase linearly with temperature ...Citation -
Examines the dynamics of the explosion of a liquid film by an ultraviolet excimer pulsed laser studied experimentally on top of an amorphous silicon film deposited on fused quartz. Background on thermal ...
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In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where ...
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Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs ...
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