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• 1. [Article] Remote Plasma Assisted Growth of Graphene Films

  Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma ...

  Citation × Citation Citation Abstract Copy Title: Remote Plasma Assisted Growth of Graphene Films Author: Nandamuri, Gopichand, Roumimov, Sergei, Solanki, Raj Year: 2010 Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications. Title: Remote Plasma Assisted Growth of Graphene Films Author: Nandamuri, Gopichand, Roumimov, Sergei, Solanki, Raj Year: 2010 Single and multiple layers of graphene films were grown on 111 oriented single crystals of nickel and polycrystalline nickel films using remote plasma assisted chemical vapor deposition. Remote plasma was employed to eliminate the effect of the plasma electrical field on the orientation of the grown graphene films, as well as to reduce the growth temperature compared to conventional chemical vapor deposition. The electrical and optical properties, including high resolution transmission electron microscopy of these films, suggest that this approach is both versatile and scalable for potential large area optoelectronic applications. Close