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• 1. [Article] Nanostructured Semiconductor Heterojunctions from Quantum Dot Layers

  We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained ...

  Citation × Citation Citation Abstract Copy Title: Nanostructured Semiconductor Heterojunctions from Quantum Dot Layers Author: Könenkamp, Rolf, Word, Robert Campbell, Nadarajah, Athavan Year: 2009 We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained from CdSe quantum dots after annealing at moderate temperatures. The electronic properties are adequate for detector and solar cell applications. The growth and annealing temperatures permit deposition on light-weight and flexible substrates. Some elemental diffusion of Se across the CdSe/ZnO interface occurs in the film formation. A comparison with CdS/ZnO junctions indicates that the low Se diffusion rates are essential for efficient charge transfer. Title: Nanostructured Semiconductor Heterojunctions from Quantum Dot Layers Author: Könenkamp, Rolf, Word, Robert Campbell, Nadarajah, Athavan Year: 2009 We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained from CdSe quantum dots after annealing at moderate temperatures. The electronic properties are adequate for detector and solar cell applications. The growth and annealing temperatures permit deposition on light-weight and flexible substrates. Some elemental diffusion of Se across the CdSe/ZnO interface occurs in the film formation. A comparison with CdS/ZnO junctions indicates that the low Se diffusion rates are essential for efficient charge transfer. Close