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• 1. [Article] Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure

  Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, ...

  Citation × Citation Citation Abstract Copy Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Title: Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure Author: Browning, Robert, Kuperman, Neal, Moon, Bill, Solanki, Raj Year: 2017 Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of y-InSe and Sb2Se3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of y-InSe (intrinsically n-type) followed by a layer of Sb2Se3 (intrinsically p-type) that display diode characteristics were also grown. Close